Latest resources from Efficient Power Conversion Corporation (EPC)
eGaN® FET Electrical Characteristics
In this paper the basic electrical characteristics of eGaN FETs are explained and compared against silicon MOSFETs. A good understanding of the sim...
eGaN® FET Drivers and Layout Considerations
When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gat...
Gallium Nitride (GaN) Technology Overview
For over three decades, power management efficiency and cost showed steady improvement as innovations in power MOSFET structures, technology, and c...